| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| A63L7332 A63L7332E-42 A63L7332E-45 A63L7332E-5 A63 |
128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output
4.2ns 128K x 32bit synchronous high speed SRAM
4.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology Corporation
|
| IC62C1024 IC62C1024-35TI IC62C1024-35W IC62C1024-3 |
128K X 8 HIGH SPEED CMOS STATIC RAM
128K X 8 HIGH SPEED CMOS STATIC RAM 128K的乘八高速CMOS静态RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
55ns; 5V; 128K x 8 high-speed CMOS static RAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns
JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| KM68V1002CI |
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS61LV12816LL-12T IS61LV12816LL-12BI IS61LV12816LL |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| EDI8L32128V12AC EDI8L32128V12AI EDI8L32128V15AC ED |
12ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
15ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
20ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
| IS61C12816NBSP IS61C12816-15T IS61C12816-12T IS61C |
128K x 16 HIGH-SPEED CMOS STATIC RAM 128K X 16 STANDARD SRAM, 15 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM 128K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| IS63LV1024 IS63LV1024-10TI IS63LV1024-10T IS63LV10 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 8 ns, PDSO32
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 10 ns, PDSO32
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
Integrated Silicon Solu...
ISSI[Integrated Silicon Solution Inc]
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
EPCOS AG
|
| A63P7336E-4.2F A63P7336 A63P7336E A63P7336E-2.6 A6 |
128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的米36位同步高的Burst计数器和流水线数据输出高速SRAM
128K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的米6位同步高的Burst计数器和流水线数据输出高速SRAM
DIODE, ZENER, 12V, 500MW, DO35
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| V61C5181024 |
128K X 8 HIGH SPEED STATIC RAM
|
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| 29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
|
Turbo IC
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